Micron Ships World’s First 232-Layer NAND, Extends Technology Leadership
Leading-Edge Technology Delivers Unrivaled Performance
Micron’s 232-layer NAND technology provides the high-performance storage required to sustain cutting-edge solutions and real-time services needed in data center and automotive applications, as well as responsive, immersive experiences on mobile devices, consumer electronics, and consumer computer systems. — Scott DeBoer, executive vice president of technology and products, Micron This technology node enables the introduction of the industry’s fastest I/O speed — 2.4 gigabytes per second (GB/s) — to satisfy the low-latency and high-throughput demands of data-centric workloads such as AI and machine learning, unstructured databases, and real-time analytics, and cloud computing. That speed represents twice the data transfer speeds of the fastest interface enabled on Micron’s 176-layer node. Micron 232-layer NAND also delivers up to 100% higher write bandwidth and more than 75% higher read bandwidth per die than the prior generation. These benefits translate to performance and energy efficiency gains in SSDs and embedded NAND solutions. Micron’s 232-layer NAND also presents the world’s first six-plane TLC production. It has the most planes per die of any TLC flash and offers autonomous read capability in each plane. The high I/O speed, read and write latency, and six-plane architecture delivers best-in-class data transfers in multiple formats. This structure ensures more infrequent collisions between reading and writing commands and drives system-level QoS improvements. Micron’s 232-layer NAND is the first in production to enable NV-LPDDR4, a low-voltage interface that delivers more than 30% per-bit transfer savings compared to prior I/O interfaces. The company’s 232-layer NAND solutions offer ideal support for mobile applications and deployments in the data center and at the intelligent edge that must offset improved performance with lower consumption. The interface is also backward compatible to support legacy systems and controllers. The compact form factor of 232-layer NAND offers customers flexibility in their designs while enabling the highest TLC density per square millimeter ever produced (at 14.6 Gb/mm²). The areal density is between thirty-five and one-hundred percent higher than competing TLC products in the market currently. Shipping in a new 11.5 mm x 13.5 mm package, the new 232-layer NAND features a 28% less package size than previous generations, making it the smallest high-density NAND available. More density in a smaller footprint minimizes board space for a diverse set of deployments.
Next-Generation NAND Enables Innovation Across Markets
The development of 232-layer NAND results from Micron’s leadership in research, development, and process technology advancements. The breakthrough capabilities of this NAND will enable customers to deliver more innovative solutions in data centers, thinner and lighter laptops, the latest mobile devices, and across the intelligent edge. — Sumit Sadana, chief business officer, Micron
Availability
Micron’s 232-layer NAND is now in volume production in the company’s Singapore fab. It is initially shipping to customers in component form and through its Crucial SSD consumer product line. Additional product and availability announcements will follow. News Source: Micron
